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<!--
=======================================================================
Copyright 2025 UCLA NanoCAD Laboratory
Licensed under the Apache License, Version 2.0 (the "License");
you may not use this file except in compliance with the License.
You may obtain a copy of the License at
http://www.apache.org/licenses/LICENSE-2.0
Unless required by applicable law or agreed to in writing, software
distributed under the License is distributed on an "AS IS" BASIS,
WITHOUT WARRANTIES OR CONDITIONS OF ANY KIND, either express or implied.
See the License for the specific language governing permissions and
limitations under the License.
=======================================================================
Filename: assembly_process_definitions.xml
Author: Alexander Graening
Affiliation: University of California, Los Angeles
Email: agraening@ucla.edu
Assembly Process Definition Format:
- Name: The name listed here is the name that should be referenced in the system definition.
- Materials Cost per mm2: This is given in units of $/mm^2. This is the
cost of the materials used in the assembly process.
- Pick and place machine cost in USD.
- Pick and place machine lifetime in years over which the initial costs are ammortized.
- Pick and place machine uptime as a fraction of ownership time. The value should be between 0 and 1.
- Pick and place technician yearly cost in USD.
- Pick and place time in seconds.
- Pick and place group size. This is the number of chips that can be picked and placed at once.
- Bonding machine cost in USD.
- Bonding machine lifetime in years over which the initial costs are ammortized.
- Bonding machine uptime as a fraction of ownership time. The value should be between 0 and 1.
- Bonding technician yearly cost in USD.
- Bonding time in seconds.
- Bonding group size. This is the number of chips that can be bonded at once.
- Die separation distance in mm.
- Edge exclusion distance in mm.
- Maximum pad current density in A/mm^2.
- Bonding pitch in mm.
- Alignment yield as a fraction between 0 and 1.
- Bonding yield as a fraction between 0 and 1.
- Dielectric bond defect density in units of defects/mm^2.
Description: Define a starter assembly process definition library for the example design.
The actual parameters are intended to come relatively close to reasonable parameters,
but users should replace these numbers with real numbers if they have them.
Note that each parameter is required to be set even if it is not relevant to the application.
If is it not used, select a relevant value that will interact correctly with the cost model.
If no value is selected, at least define the line as the empty string: <parameter_name="">.
A list of required parameters for the assembly object is below:
- name
- materials_cost_per_mm2
- picknplace_machine_cost
- picknplace_machine_lifetime
- picknplace_machine_uptime
- picknplace_technician_yearly_cost
- picknplace_time
- picknplace_group
- bonding_machine_cost
- bonding_machine_lifetime
- bonding_machine_uptime
- bonding_technician_yearly_cost
- bonding_time
- bonding_group
- die_separation
- edge_exclusion
- max_pad_current_density
- bonding_pitch
- alignment_yield
- bonding_yield
- dielectric_bond_defect_density
-->
<!-- Note on parameters.
materials_cost_per_mm2 is set arbitrarily, need a source
machine_cost numbers are set based on discussions with Professor Iyer and Krutikesh
machine_lifetime and machine_uptime are set to arbitrary numbers that make some sense
picknplace_time and bonding_time are set based on discussions with Krutikesh
technician costs are arbitrary
die_separation and edge_exclusion are arbitrary (check if edge_exclusion here is used anymore now this is defined in the wafer_process)
max_pad_current_density was set according to <fill in source here>
dielecric_bond_defect_density was set to 0 since there is no dielectric bond for organic substrates.
alignment_yield and bonding_yield are set arbitrarily with some small verification from <fill in source here>
bonding_pitch I think was set according to UCIe standard <add source here>
group size is set somewhat arbitrarily to show individual placement but bonding of multiple chips simultaneously
-->
<assembly_processes>
<assembly name="organic_25_simultaneous_bonding"
materials_cost_per_mm2="0.1"
bb_cost_per_second=""
picknplace_machine_cost="800000"
picknplace_machine_lifetime="5"
picknplace_machine_uptime="0.9"
picknplace_technician_yearly_cost="100000"
picknplace_time="10"
picknplace_group="1"
bonding_machine_cost="800000"
bonding_machine_lifetime="5"
bonding_machine_uptime="0.9"
bonding_technician_yearly_cost="100000"
bonding_time="20"
bonding_group="10"
die_separation="1.000"
edge_exclusion="2.000"
max_pad_current_density="100.0"
bonding_pitch="0.025"
alignment_yield="0.999"
bonding_yield="0.999999"
dielectric_bond_defect_density="0.0"
tsv_area="0.0001"
tsv_yield="0.999999"
tsv_pitch="0.025">
</assembly>
<assembly name="organic_55_simultaneous_bonding"
materials_cost_per_mm2="0.1"
bb_cost_per_second=""
picknplace_machine_cost="1000000"
picknplace_machine_lifetime="5"
picknplace_machine_uptime="0.9"
picknplace_technician_yearly_cost="100000"
picknplace_time="10"
picknplace_group="1"
bonding_machine_cost="300000"
bonding_machine_lifetime="5"
bonding_machine_uptime="0.9"
bonding_technician_yearly_cost="100000"
bonding_time="20"
bonding_group="10"
die_separation="1.000"
edge_exclusion="2.000"
max_pad_current_density="100.0"
bonding_pitch="0.055"
alignment_yield="0.999"
bonding_yield="0.999999"
dielectric_bond_defect_density="0.0"
tsv_area="0.0001"
tsv_yield="0.999999"
tsv_pitch="0.055">
</assembly>
<assembly name="organic_simultaneous_bonding"
materials_cost_per_mm2="0.1"
bb_cost_per_second=""
picknplace_machine_cost="600000"
picknplace_machine_lifetime="5"
picknplace_machine_uptime="0.9"
picknplace_technician_yearly_cost="100000"
picknplace_time="10"
picknplace_group="1"
bonding_machine_cost="200000"
bonding_machine_lifetime="5"
bonding_machine_uptime="0.9"
bonding_technician_yearly_cost="100000"
bonding_time="20"
bonding_group="64"
die_separation="1.000"
edge_exclusion="2.000"
max_pad_current_density="100.0"
bonding_pitch="0.110"
alignment_yield="0.999"
bonding_yield="0.999999"
dielectric_bond_defect_density="0.0"
tsv_area="0.0001"
tsv_yield="0.999999"
tsv_pitch="0.110">
</assembly>
<!-- Note on parameters.
materials_cost_per_mm2 is set arbitrarily, need a source
machine_cost numbers are set based on discussions with Professor Iyer and Krutikesh
machine_lifetime and machine_uptime are set to arbitrary numbers that make some sense
picknplace_time and bonding_time are set based on discussions with Krutikesh
technician costs are arbitrary
die_separation and edge_exclusion are arbitrary (check if edge_exclusion here is used anymore now this is defined in the wafer_process)
max_pad_current_density was set according to <fill in source here>
dielecric_bond_defect_density was set to 0 since this process is for TCB not for hybrid.
alignment_yield and bonding_yield are set arbitrarily with some small verification from <fill in source here>
bonding_pitch was set according to the waferscale tapeout at UCLA
group size was set to show individual placement and bonding
-->
<assembly name="silicon_45_individual_bonding"
materials_cost_per_mm2="0.1"
bb_cost_per_second=""
picknplace_machine_cost="500000"
picknplace_machine_lifetime="5"
picknplace_machine_uptime="0.9"
picknplace_technician_yearly_cost="100000"
picknplace_time="10"
picknplace_group="1"
bonding_machine_cost="500000"
bonding_machine_lifetime="5"
bonding_machine_uptime="0.9"
bonding_technician_yearly_cost="100000"
bonding_time="20"
bonding_group="1"
die_separation="0.100"
edge_exclusion="0.100"
max_pad_current_density="10000.0"
bonding_pitch="0.045"
alignment_yield="0.999"
bonding_yield="0.999999"
dielectric_bond_defect_density="0.0"
tsv_area="0.0001"
tsv_yield="0.999999"
tsv_pitch="0.045">
</assembly>
<assembly name="silicon_individual_bonding"
materials_cost_per_mm2="0.0"
bb_cost_per_second=""
picknplace_machine_cost="1800000"
picknplace_machine_lifetime="5"
picknplace_machine_uptime="0.9"
picknplace_technician_yearly_cost="100000"
picknplace_time="10"
picknplace_group="1"
bonding_machine_cost="1800000"
bonding_machine_lifetime="5"
bonding_machine_uptime="0.9"
bonding_technician_yearly_cost="100000"
bonding_time="20"
bonding_group="1"
die_separation="0.100"
edge_exclusion="0.100"
max_pad_current_density="10000.0"
bonding_pitch="0.010"
alignment_yield="0.999"
bonding_yield="0.999999"
dielectric_bond_defect_density="0.0"
tsv_area="0.0001"
tsv_yield="0.999999"
tsv_pitch="0.010">
</assembly>
<assembly name="glass_individual_bonding"
materials_cost_per_mm2="0.0"
bb_cost_per_second=""
picknplace_machine_cost="1800000"
picknplace_machine_lifetime="5"
picknplace_machine_uptime="0.9"
picknplace_technician_yearly_cost="100000"
picknplace_time="10"
picknplace_group="1"
bonding_machine_cost="1800000"
bonding_machine_lifetime="5"
bonding_machine_uptime="0.9"
bonding_technician_yearly_cost="100000"
bonding_time="20"
bonding_group="1"
die_separation="0.100"
edge_exclusion="0.100"
max_pad_current_density="10000.0"
bonding_pitch="0.010"
alignment_yield="0.999"
bonding_yield="0.999999"
dielectric_bond_defect_density="0.0"
tsv_area="0.0001"
tsv_yield="0.999999"
tsv_pitch="0.010">
</assembly>
<assembly name="silicon_simultaneous_bonding"
materials_cost_per_mm2="0.0"
bb_cost_per_second=""
picknplace_machine_cost="1800000"
picknplace_machine_lifetime="5"
picknplace_machine_uptime="0.9"
picknplace_technician_yearly_cost="100000"
picknplace_time="10"
picknplace_group="1"
bonding_machine_cost="1800000"
bonding_machine_lifetime="5"
bonding_machine_uptime="0.9"
bonding_technician_yearly_cost="100000"
bonding_time="20"
bonding_group="64"
die_separation="0.100"
edge_exclusion="0.100"
max_pad_current_density="10000.0"
bonding_pitch="0.010"
alignment_yield="0.999"
bonding_yield="0.999999"
dielectric_bond_defect_density="0.0"
tsv_area="0.0001"
tsv_yield="0.999999"
tsv_pitch="0.010">
</assembly>
<!--
<assembly name="glass_individual_bonding"
materials_cost_per_mm2="0.0"
bb_cost_per_second=""
picknplace_machine_cost="1800000"
picknplace_machine_lifetime="5"
picknplace_machine_uptime="0.9"
picknplace_technician_yearly_cost="100000"
picknplace_time="10"
picknplace_group="1"
bonding_machine_cost="1800000"
bonding_machine_lifetime="5"
bonding_machine_uptime="0.9"
bonding_technician_yearly_cost="100000"
bonding_time="20"
bonding_group="1"
die_separation="0.100"
edge_exclusion="0.100"
max_pad_current_density="10000.0"
bonding_pitch="0.010"
alignment_yield="0.999"
bonding_yield="0.999999"
dielectric_bond_defect_density="0.0"
tsv_area="0.0001"
tsv_yield="0.999999"
tsv_pitch="0.010">
</assembly>
-->
<!-- Note on parameters.
materials_cost_per_mm2 is set arbitrarily, need a source
machine_cost numbers are set based on discussions with Professor Iyer and Krutikesh
machine_lifetime and machine_uptime are set to arbitrary numbers that make some sense
picknplace_time and bonding_time are set based on discussions with Krutikesh
technician costs are arbitrary
die_separation and edge_exclusion are arbitrary (check if edge_exclusion here is used anymore now this is defined in the wafer_process)
max_pad_current_density was set according to <fill in source here>
dielecric_bond_defect_density was set since nonzero since this is meant to be for hybrid bonding.
alignment_yield and bonding_yield are set arbitrarily with some small verification from <fill in source here>
bonding_pitch was set according to the waferscale tapeout at UCLA
group size was set to show individual placement and bonding
-->
<assembly name="w2w_hybrid_bonding"
materials_cost_per_mm2="0.1"
bb_cost_per_second=""
picknplace_machine_cost="1000000"
picknplace_machine_lifetime="5"
picknplace_machine_uptime="0.9"
picknplace_technician_yearly_cost="100000"
picknplace_time="10"
picknplace_group="1000"
bonding_machine_cost="1000000"
bonding_machine_lifetime="5"
bonding_machine_uptime="0.9"
bonding_technician_yearly_cost="100000"
bonding_time="20"
bonding_group="1000"
die_separation="0.100"
edge_exclusion="0.100"
max_pad_current_density="10000.0"
bonding_pitch="0.001"
alignment_yield="0.99999"
bonding_yield="0.99999999"
dielectric_bond_defect_density="0.0001"
tsv_area="0.0001"
tsv_yield="0.999999"
tsv_pitch="0.001">
</assembly>
<!-- Note on parameters
Here the parameters are set to as much as possible eliminate all assembly cost and yield impact.
-->
<assembly name="dummy_assembly_process"
materials_cost_per_mm2="0.0"
bb_cost_per_second=""
picknplace_machine_cost="0"
picknplace_machine_lifetime="1"
picknplace_machine_uptime="1.0"
picknplace_technician_yearly_cost="0"
picknplace_time="1"
picknplace_group="1"
bonding_machine_cost="0"
bonding_machine_lifetime="1"
bonding_machine_uptime="1.0"
bonding_technician_yearly_cost="0"
bonding_time="1"
bonding_group="1"
die_separation="0.0"
edge_exclusion="0.0"
max_pad_current_density="1.0"
bonding_pitch="1.0"
alignment_yield="1.0"
bonding_yield="1.0"
dielectric_bond_defect_density="0.0"
tsv_area="0.0001"
tsv_yield="0.999999"
tsv_pitch="1.0">
</assembly>
</assembly_processes>